g g g g eneral eneral eneral eneral d d d d escription escription escription escription the is n-channel mos field effect transistor designed for high current switching applications. rugged e as capability and ultra low r ds(on) is suitable for pwm, load switching especially for e-bike controller applications. features features features features v ds = 70 v i d =80a@ v gs = 10 v r ds(on) < 5.8 m @ v gs = 10 v special d esigned for e-bike c ontroller application u ltra l ow on-resistance h igh uis and uis 100% t est application application application application 48v e-bike c ontroller a pplications hard switched and high frequency circuits uninterruptible power supply table table table table 1. 1. 1. 1. a a a a bsolute bsolute bsolute bsolute maximum maximum maximum maximum r r r r atings atings atings atings (ta=25 (ta=25 (ta=25 (ta=25 ) ) ) ) symbol symbol symbol symbol parameter parameter parameter parameter value value value value unit unit unit unit v ds drain-source voltage ( v gs= 0v 70 v v gs gate-source voltage ( v ds= 0v) 25 v i d (dc) drain current (dc) at tc=25 80 a i d (dc) drain current (dc) at tc=100 78 a i dm (pluse) drain current-continuous@ current-pulsed (note (note (note (note 1 1 1 1 ) ) ) ) 320 a dv/dt peak d iode r ecovery v oltage 30 v /n s p d maximum power dissipation (tc=25 ) 145 w derating f actor 1.9 w/ e as single p ulse a valanche e nergy (note (note (note (note 2 2 2 2 ) ) ) ) 590 mj t j ,t stg operating junction and storage temperature range -55 to 175 note s 1. repetitive rating: pulse width limited by maximum junction temperature 2. e as condition : t j =25 ,v dd =33v,v g =10v,i d =48.5a schematic schematic schematic schematic d d d d iagram iagram iagram iagram v dss = 70 v i dss = 80a r ds(on ) = 5.5 m ? ? DK48N80 pb free plating product DK48N80 pb n-channel trench process power mosfet transistors DK48N80 g d s DK48N80 (to-220 heatsink) ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 rev.05
table table table table 2. 2. 2. 2. t t t t hermal hermal hermal hermal characteristic characteristic characteristic characteristic symbol symbol symbol symbol parameter parameter parameter parameter value value value value unit unit unit unit r jc thermal resistance,junction-to- case 0.6 /w table table table table 3. 3. 3. 3. e e e e lectrical lectrical lectrical lectrical characteristics characteristics characteristics characteristics (ta=25 (ta=25 (ta=25 (ta=25 unless unless unless unless otherwise otherwise otherwise otherwise noted) noted) noted) noted) symbol symbol symbol symbol parameter parameter parameter parameter condition condition condition condition s s s s min min min min typ typ typ typ max max max max unit unit unit unit on/ on/ on/ on/ o o o o ff ff ff ff s s s s tates tates tates tates bv dss drain-source breakdown voltage v gs =0v i d =250 a 70 v i dss zero gate voltage drain current (tc=25 ) v ds = 68 v,v gs =0v 1 a i dss zero gate voltage drain current (tc=125 ) v ds = 68 v,v gs =0v 1 a i gss gate-body leakage current v gs = 25 v,v ds =0v 100 na v gs(th) gate threshold voltage v ds =v gs ,i d =250 a 2 4 v r ds(on) drain-source on-state resistance v gs = 10 v, i d =4 0 a 5.5 5.8 m dynamic dynamic dynamic dynamic characteristics characteristics characteristics characteristics g fs forward transconductance v ds = 10 v,i d = 40 a 28 s c iss input capacitance v ds = 25 v,v gs =0v, f =1.0mhz 3200 p f c oss output capacitance 3 50 p f c rss reverse transfer capacitance 32 0 p f q g total gate charge v ds = 30 v,i d = 30 a, v gs = 10 v 75 nc q gs gate-source charge 14 nc q gd gate-drain charge 20 nc s s s s witching witching witching witching t t t t imes imes imes imes t d(on) turn-on delay time v dd = 3 0v,i d = 2 a ,r l =15 v gs = 10 v,r g = 2.5 12 ns t r turn-on rise time 14 ns t d(off) turn-off delay time 25 ns t f turn-off fall time 30 ns source- source- source- source- d d d d rain rain rain rain d d d d iode iode iode iode characteristics characteristics characteristics characteristics i sd source- d rain c urrent(body diode) 80 a i sdm pulsed source- d rain c urrent(body diode) 320 a v sd forward on v oltage (note (note (note (note 1 1 1 1 ) ) ) ) t j =25 ,i sd =40a,v gs =0v 0.8 0.95 v t rr reverse recovery time (note (note (note (note 1 1 1 1 ) ) ) ) t j =25 ,i f =75a di/dt=100a/ s 45 ns q rr reverse recovery charge (note (note (note (note 1 1 1 1 ) ) ) ) 90 nc t on forward turn-on time intrinsic turn-on time is negligible(turn-on is dominated by l s +l d ) note s 1 . pulse test: pulse width 300 s, duty cycle 1.5 % , r g =25 , starting t j =25 ? DK48N80 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 rev.05
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